Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

Shoikrom Askarov; Bashirulla Sharipov; Shokhista Saliyeva; Abdulaziz Mavlyanov; Solizhon Srazev; Tuchi Toshboev

doi:doi:10.11648/j.ajae.20200701.11

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Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, Tuchi Toshboev

Published in American Journal of Aerospace Engineering (Volume 7, Issue 1)

Received: 3 June 2019 Accepted: 13 August 2019 Published: 8 January 2020

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Abstract

The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO₄ molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.

Published in	American Journal of Aerospace Engineering (Volume 7, Issue 1)
DOI	10.11648/j.ajae.20200701.11
Page(s)	1-5
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Silicon, Oxygen, Sulfur, Thermal Donors (LTD), Fast Diffusing Impurities (FDI), Electrically Neutral Chemically Bound Molecules

References

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APA Style

Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, et al. (2020). Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. American Journal of Aerospace Engineering, 7(1), 1-5. https://doi.org/10.11648/j.ajae.20200701.11

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ACS Style

Shoikrom Askarov; Bashirulla Sharipov; Shokhista Saliyeva; Abdulaziz Mavlyanov; Solizhon Srazev, et al. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. Am. J. Aerosp. Eng. 2020, 7(1), 1-5. doi: 10.11648/j.ajae.20200701.11

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AMA Style

Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, et al. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. Am J Aerosp Eng. 2020;7(1):1-5. doi: 10.11648/j.ajae.20200701.11

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@article{10.11648/j.ajae.20200701.11,
  author = {Shoikrom Askarov and Bashirulla Sharipov and Shokhista Saliyeva and Abdulaziz Mavlyanov and Solizhon Srazev and Tuchi Toshboev},
  title = {Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities},
  journal = {American Journal of Aerospace Engineering},
  volume = {7},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.ajae.20200701.11},
  url = {https://doi.org/10.11648/j.ajae.20200701.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajae.20200701.11},
  abstract = {The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO4 molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.},
 year = {2020}
}

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TY  - JOUR
T1  - Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities
AU  - Shoikrom Askarov
AU  - Bashirulla Sharipov
AU  - Shokhista Saliyeva
AU  - Abdulaziz Mavlyanov
AU  - Solizhon Srazev
AU  - Tuchi Toshboev
Y1  - 2020/01/08
PY  - 2020
N1  - https://doi.org/10.11648/j.ajae.20200701.11
DO  - 10.11648/j.ajae.20200701.11
T2  - American Journal of Aerospace Engineering
JF  - American Journal of Aerospace Engineering
JO  - American Journal of Aerospace Engineering
SP  - 1
EP  - 5
PB  - Science Publishing Group
SN  - 2376-4821
UR  - https://doi.org/10.11648/j.ajae.20200701.11
AB  - The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO4 molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.
VL  - 7
IS  - 1
ER  -

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Author Information

Shoikrom Askarov

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Bashirulla Sharipov

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Shokhista Saliyeva

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Abdulaziz Mavlyanov

Laboratory of Mining, Uzbek-Japan Innovation Centre of Youth, Tashkent State Technical University, Tashkent, Uzbekistan
Solizhon Srazev

Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Tuchi Toshboev

Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan

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APA Style

Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, et al. (2020). Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. American Journal of Aerospace Engineering, 7(1), 1-5. https://doi.org/10.11648/j.ajae.20200701.11

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ACS Style

Shoikrom Askarov; Bashirulla Sharipov; Shokhista Saliyeva; Abdulaziz Mavlyanov; Solizhon Srazev, et al. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. Am. J. Aerosp. Eng. 2020, 7(1), 1-5. doi: 10.11648/j.ajae.20200701.11

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AMA Style

Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, et al. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities. Am J Aerosp Eng. 2020;7(1):1-5. doi: 10.11648/j.ajae.20200701.11

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@article{10.11648/j.ajae.20200701.11,
  author = {Shoikrom Askarov and Bashirulla Sharipov and Shokhista Saliyeva and Abdulaziz Mavlyanov and Solizhon Srazev and Tuchi Toshboev},
  title = {Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities},
  journal = {American Journal of Aerospace Engineering},
  volume = {7},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.ajae.20200701.11},
  url = {https://doi.org/10.11648/j.ajae.20200701.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajae.20200701.11},
  abstract = {The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO4 molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities
AU  - Shoikrom Askarov
AU  - Bashirulla Sharipov
AU  - Shokhista Saliyeva
AU  - Abdulaziz Mavlyanov
AU  - Solizhon Srazev
AU  - Tuchi Toshboev
Y1  - 2020/01/08
PY  - 2020
N1  - https://doi.org/10.11648/j.ajae.20200701.11
DO  - 10.11648/j.ajae.20200701.11
T2  - American Journal of Aerospace Engineering
JF  - American Journal of Aerospace Engineering
JO  - American Journal of Aerospace Engineering
SP  - 1
EP  - 5
PB  - Science Publishing Group
SN  - 2376-4821
UR  - https://doi.org/10.11648/j.ajae.20200701.11
AB  - The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO4 molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.
VL  - 7
IS  - 1
ER  -

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