Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell

Nisrine Benloucif

doi:doi:10.11648/j.ajpa.20130102.11

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Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell

Nisrine Benloucif

Published in American Journal of Physics and Applications (Volume 1, Issue 2)

Received: 4 October 2013 Published: 30 October 2013

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Abstract

In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.

Published in	American Journal of Physics and Applications (Volume 1, Issue 2)
DOI	10.11648/j.ajpa.20130102.11
Page(s)	33-37
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Polycrystalline Silicon, Silicon Nitride, Solar Cell, Grain Boundary, Efficiency

References

[1]	J.G.E.Gardeniers and H.A.C. Tilmans, ‘LPCVD silicon-rich silicon nitride films for applications in micromechanics studies with statistical experimental design’, J.Vac.Sci.Technol.A.14 (5), Sep/Oct 1996.
[2]	O. Schultz, M. Hofmann,S. W. Glunz, G. P. Wileke, ‘silicon oxide/silicon nitride stack system for 20% efficient silicon solar cells’,Freiburg,D-79110.31stIEEE,PVSC Orlando, Florida 2005.
[3]	Y. Laghla, ‘Elaboration and characterization of polysilicon thin films deposited by LPCVD for photovoltaic applications', Doctorate thesis, Paul Sabatier, University of Toulouse, N° 3038(1998).
[4]	G.D.cody, T. Tiedje, B.Abeles, B.Brooks et Y.Goldstein, Phys.Rev. Lett.47, 1480 , (1981).
[5]	B. Ba, M. Kane, J. Sarr. ‘ Modelling recombination current in polysilicon solar cell grain boundaries’, Solar Energy Material et solar cells , pp 143- 154, (2003).
[6]	B. Zebentout, Z. Benamara, T. Mohammed-Brahim, Thin solid films, Vol 516(2007), pp84-90.
[7]	J.J.Liou, W.Wong, ‘Comparison and Optimization of the Performance of Si and GaAs Solar cells’, Solar Energy Materials and Solar Cells, 28, pp.9- 28, 1992.
[8]	K. Coates, S. Morrison, S. Narayanan, ‘Deposition of silicon nitride to improve the conversion efficiency of multicrystalline silicon solar cell’, Proceeding of 16th European Photovoltaic Solar Energy conference, Glasgow, p 1279, 2000.

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APA Style

Nisrine Benloucif. (2013). Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. American Journal of Physics and Applications, 1(2), 33-37. https://doi.org/10.11648/j.ajpa.20130102.11

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ACS Style

Nisrine Benloucif. Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. Am. J. Phys. Appl. 2013, 1(2), 33-37. doi: 10.11648/j.ajpa.20130102.11

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AMA Style

Nisrine Benloucif. Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. Am J Phys Appl. 2013;1(2):33-37. doi: 10.11648/j.ajpa.20130102.11

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@article{10.11648/j.ajpa.20130102.11,
  author = {Nisrine Benloucif},
  title = {Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell},
  journal = {American Journal of Physics and Applications},
  volume = {1},
  number = {2},
  pages = {33-37},
  doi = {10.11648/j.ajpa.20130102.11},
  url = {https://doi.org/10.11648/j.ajpa.20130102.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20130102.11},
  abstract = {In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.},
 year = {2013}
}

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TY  - JOUR
T1  - Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell
AU  - Nisrine Benloucif
Y1  - 2013/10/30
PY  - 2013
N1  - https://doi.org/10.11648/j.ajpa.20130102.11
DO  - 10.11648/j.ajpa.20130102.11
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 33
EP  - 37
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20130102.11
AB  - In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.
VL  - 1
IS  - 2
ER  -

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Author Information

Nisrine Benloucif

Department of electronic, Faculty of science and engineering, Constantine, Algeria

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APA Style

Nisrine Benloucif. (2013). Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. American Journal of Physics and Applications, 1(2), 33-37. https://doi.org/10.11648/j.ajpa.20130102.11

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ACS Style

Nisrine Benloucif. Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. Am. J. Phys. Appl. 2013, 1(2), 33-37. doi: 10.11648/j.ajpa.20130102.11

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AMA Style

Nisrine Benloucif. Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell. Am J Phys Appl. 2013;1(2):33-37. doi: 10.11648/j.ajpa.20130102.11

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@article{10.11648/j.ajpa.20130102.11,
  author = {Nisrine Benloucif},
  title = {Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell},
  journal = {American Journal of Physics and Applications},
  volume = {1},
  number = {2},
  pages = {33-37},
  doi = {10.11648/j.ajpa.20130102.11},
  url = {https://doi.org/10.11648/j.ajpa.20130102.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20130102.11},
  abstract = {In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell
AU  - Nisrine Benloucif
Y1  - 2013/10/30
PY  - 2013
N1  - https://doi.org/10.11648/j.ajpa.20130102.11
DO  - 10.11648/j.ajpa.20130102.11
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 33
EP  - 37
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20130102.11
AB  - In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.
VL  - 1
IS  - 2
ER  -

Copy | Download