Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Murielle Béranger

doi:doi:10.11648/j.ajpa.20190702.11

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Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Murielle Béranger

Published in American Journal of Physics and Applications (Volume 7, Issue 2)

Received: 23 January 2019 Accepted: 5 March 2019 Published: 21 March 2019

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Abstract

Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.

Published in	American Journal of Physics and Applications (Volume 7, Issue 2)
DOI	10.11648/j.ajpa.20190702.11
Page(s)	34-42
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Cathodoluminescence, Energy Dispersive X-Ray Detector, Silicon Drift Detector, Luminescent Material

References

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APA Style

Murielle Béranger. (2019). Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. American Journal of Physics and Applications, 7(2), 34-42. https://doi.org/10.11648/j.ajpa.20190702.11

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ACS Style

Murielle Béranger. Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. Am. J. Phys. Appl. 2019, 7(2), 34-42. doi: 10.11648/j.ajpa.20190702.11

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AMA Style

Murielle Béranger. Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. Am J Phys Appl. 2019;7(2):34-42. doi: 10.11648/j.ajpa.20190702.11

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@article{10.11648/j.ajpa.20190702.11,
  author = {Murielle Béranger},
  title = {Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials},
  journal = {American Journal of Physics and Applications},
  volume = {7},
  number = {2},
  pages = {34-42},
  doi = {10.11648/j.ajpa.20190702.11},
  url = {https://doi.org/10.11648/j.ajpa.20190702.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20190702.11},
  abstract = {Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.},
 year = {2019}
}

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TY  - JOUR
T1  - Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials
AU  - Murielle Béranger
Y1  - 2019/03/21
PY  - 2019
N1  - https://doi.org/10.11648/j.ajpa.20190702.11
DO  - 10.11648/j.ajpa.20190702.11
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 34
EP  - 42
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20190702.11
AB  - Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.
VL  - 7
IS  - 2
ER  -

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Author Information

Murielle Béranger

Process Department, Trixell, Moirans, France

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APA Style

Murielle Béranger. (2019). Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. American Journal of Physics and Applications, 7(2), 34-42. https://doi.org/10.11648/j.ajpa.20190702.11

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ACS Style

Murielle Béranger. Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. Am. J. Phys. Appl. 2019, 7(2), 34-42. doi: 10.11648/j.ajpa.20190702.11

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AMA Style

Murielle Béranger. Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials. Am J Phys Appl. 2019;7(2):34-42. doi: 10.11648/j.ajpa.20190702.11

Copy | Download

@article{10.11648/j.ajpa.20190702.11,
  author = {Murielle Béranger},
  title = {Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials},
  journal = {American Journal of Physics and Applications},
  volume = {7},
  number = {2},
  pages = {34-42},
  doi = {10.11648/j.ajpa.20190702.11},
  url = {https://doi.org/10.11648/j.ajpa.20190702.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20190702.11},
  abstract = {Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials
AU  - Murielle Béranger
Y1  - 2019/03/21
PY  - 2019
N1  - https://doi.org/10.11648/j.ajpa.20190702.11
DO  - 10.11648/j.ajpa.20190702.11
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 34
EP  - 42
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20190702.11
AB  - Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.
VL  - 7
IS  - 2
ER  -

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