A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad

Bian Yanfei; Wang Zhenxuan; Cai Meng; Wang Ruofu; Tian Jingqun

doi:doi:10.11648/j.ijmea.20170504.16

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A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad

Bian Yanfei, Wang Zhenxuan, Cai Meng, Wang Ruofu, Tian Jingqun

Published in International Journal of Mechanical Engineering and Applications (Volume 5, Issue 4)

Received: 11 July 2017 Accepted: 19 July 2017 Published: 11 August 2017

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Abstract

The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.

Published in	International Journal of Mechanical Engineering and Applications (Volume 5, Issue 4)
DOI	10.11648/j.ijmea.20170504.16
Page(s)	223-227
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Electrochemical Mechanical Polishing, Polish Pad, Removal Rate, Within Wafer Non-Uniformity, Model

References

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[6]	G. S. Kristin, C. W. Alan: Journal of Applied Electrochemistry. Vol. 39 (2009), p 1719.
[7]	J. J. Murata, K. S. Yodogawa and K. Ban: INT J MACH TOOL MANU. Vol. 114 (2017), p 1.
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APA Style

Bian Yanfei, Wang Zhenxuan, Cai Meng, Wang Ruofu, Tian Jingqun. (2017). A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. International Journal of Mechanical Engineering and Applications, 5(4), 223-227. https://doi.org/10.11648/j.ijmea.20170504.16

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ACS Style

Bian Yanfei; Wang Zhenxuan; Cai Meng; Wang Ruofu; Tian Jingqun. A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. Int. J. Mech. Eng. Appl. 2017, 5(4), 223-227. doi: 10.11648/j.ijmea.20170504.16

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AMA Style

Bian Yanfei, Wang Zhenxuan, Cai Meng, Wang Ruofu, Tian Jingqun. A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. Int J Mech Eng Appl. 2017;5(4):223-227. doi: 10.11648/j.ijmea.20170504.16

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@article{10.11648/j.ijmea.20170504.16,
  author = {Bian Yanfei and Wang Zhenxuan and Cai Meng and Wang Ruofu and Tian Jingqun},
  title = {A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad},
  journal = {International Journal of Mechanical Engineering and Applications},
  volume = {5},
  number = {4},
  pages = {223-227},
  doi = {10.11648/j.ijmea.20170504.16},
  url = {https://doi.org/10.11648/j.ijmea.20170504.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmea.20170504.16},
  abstract = {The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.},
 year = {2017}
}

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TY  - JOUR
T1  - A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad
AU  - Bian Yanfei
AU  - Wang Zhenxuan
AU  - Cai Meng
AU  - Wang Ruofu
AU  - Tian Jingqun
Y1  - 2017/08/11
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmea.20170504.16
DO  - 10.11648/j.ijmea.20170504.16
T2  - International Journal of Mechanical Engineering and Applications
JF  - International Journal of Mechanical Engineering and Applications
JO  - International Journal of Mechanical Engineering and Applications
SP  - 223
EP  - 227
PB  - Science Publishing Group
SN  - 2330-0248
UR  - https://doi.org/10.11648/j.ijmea.20170504.16
AB  - The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.
VL  - 5
IS  - 4
ER  -

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Author Information

Bian Yanfei

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China
Wang Zhenxuan

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China
Cai Meng

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China
Wang Ruofu

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China
Tian Jingqun

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China

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Plain Text BibTeX RIS

APA Style

Bian Yanfei, Wang Zhenxuan, Cai Meng, Wang Ruofu, Tian Jingqun. (2017). A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. International Journal of Mechanical Engineering and Applications, 5(4), 223-227. https://doi.org/10.11648/j.ijmea.20170504.16

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ACS Style

Bian Yanfei; Wang Zhenxuan; Cai Meng; Wang Ruofu; Tian Jingqun. A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. Int. J. Mech. Eng. Appl. 2017, 5(4), 223-227. doi: 10.11648/j.ijmea.20170504.16

Copy | Download

AMA Style

Bian Yanfei, Wang Zhenxuan, Cai Meng, Wang Ruofu, Tian Jingqun. A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad. Int J Mech Eng Appl. 2017;5(4):223-227. doi: 10.11648/j.ijmea.20170504.16

Copy | Download

@article{10.11648/j.ijmea.20170504.16,
  author = {Bian Yanfei and Wang Zhenxuan and Cai Meng and Wang Ruofu and Tian Jingqun},
  title = {A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad},
  journal = {International Journal of Mechanical Engineering and Applications},
  volume = {5},
  number = {4},
  pages = {223-227},
  doi = {10.11648/j.ijmea.20170504.16},
  url = {https://doi.org/10.11648/j.ijmea.20170504.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmea.20170504.16},
  abstract = {The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad
AU  - Bian Yanfei
AU  - Wang Zhenxuan
AU  - Cai Meng
AU  - Wang Ruofu
AU  - Tian Jingqun
Y1  - 2017/08/11
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmea.20170504.16
DO  - 10.11648/j.ijmea.20170504.16
T2  - International Journal of Mechanical Engineering and Applications
JF  - International Journal of Mechanical Engineering and Applications
JO  - International Journal of Mechanical Engineering and Applications
SP  - 223
EP  - 227
PB  - Science Publishing Group
SN  - 2330-0248
UR  - https://doi.org/10.11648/j.ijmea.20170504.16
AB  - The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.
VL  - 5
IS  - 4
ER  -

Copy | Download